METHOD FOR CONTROLLING THE AMOUNT OF RADIATION HAVING A PREDETERMINED WAVELENGTH TO BE ABSORBED BY A STRUCTURE DISPOSED ON A SEMICONDUCTOR
A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the rad...
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Format | Patent |
Language | English French German |
Published |
28.10.2020
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Online Access | Get full text |
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Abstract | A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact. |
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AbstractList | A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact. |
Author | MACDONALD, Christopher, J HWANG, Kiuchul WILLIAMS, Adrian, D CHENG, Kezia ALAVI, Kamal, Tabatabaie |
Author_xml | – fullname: CHENG, Kezia – fullname: HWANG, Kiuchul – fullname: WILLIAMS, Adrian, D – fullname: ALAVI, Kamal, Tabatabaie – fullname: MACDONALD, Christopher, J |
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DocumentTitleAlternate | PROCÉDÉ DE RÉGULATION DE LA QUANTITÉ DE RAYONNEMENT PRÉSENTANT UNE LONGUEUR D'ONDE PRÉDÉFINIE DEVANT ÊTRE ABSORBÉE PAR UNE STRUCTURE DISPOSÉE SUR UN SEMI-CONDUCTEUR VERFAHREN ZUR STEUERUNG DER STRAHLUNGSMENGE MIT EINER VORBESTIMMTEN WELLENLÄNGE ZUR ABSORPTION DURCH EINE AUF EINEM HALBLEITER ANGEORDNETE STRUKTUR |
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RelatedCompanies | Raytheon Company |
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Snippet | A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | METHOD FOR CONTROLLING THE AMOUNT OF RADIATION HAVING A PREDETERMINED WAVELENGTH TO BE ABSORBED BY A STRUCTURE DISPOSED ON A SEMICONDUCTOR |
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