METHOD FOR CONTROLLING THE AMOUNT OF RADIATION HAVING A PREDETERMINED WAVELENGTH TO BE ABSORBED BY A STRUCTURE DISPOSED ON A SEMICONDUCTOR

A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the rad...

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Bibliographic Details
Main Authors CHENG, Kezia, HWANG, Kiuchul, WILLIAMS, Adrian, D, ALAVI, Kamal, Tabatabaie, MACDONALD, Christopher, J
Format Patent
LanguageEnglish
French
German
Published 28.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.
Bibliography:Application Number: EP20180833562