SEMICONDUCTOR LASER

Provided is a semiconductor laser including: a core layer having an active layer and a diffraction grating layer optically coupled to the active layer; and paired clad layers arranged sandwiching the core layer, and formed with a waveguide along the core layer, and the semiconductor laser includes:...

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Bibliographic Details
Main Authors SHIBUYA, Kyoji, TERAKADO, Tomoji, MATSUHAMA, Makoto
Format Patent
LanguageEnglish
French
German
Published 24.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:Provided is a semiconductor laser including: a core layer having an active layer and a diffraction grating layer optically coupled to the active layer; and paired clad layers arranged sandwiching the core layer, and formed with a waveguide along the core layer, and the semiconductor laser includes: a flat layer provided continuously with the diffraction grating layer along the waveguide; and a temperature control mechanism for controlling the temperature of the flat layer to a temperature different from that of the diffraction grating layer.
Bibliography:Application Number: EP20180888008