INTEGRATED SENSOR OF IONIZING RADIATION AND IONIZING PARTICLES
This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers...
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Main Authors | , , , , , |
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Format | Patent |
Language | English French German |
Published |
02.09.2020
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Subjects | |
Online Access | Get full text |
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Summary: | This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined. |
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Bibliography: | Application Number: EP20180797153 |