INTEGRATED SENSOR OF IONIZING RADIATION AND IONIZING PARTICLES

This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers...

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Bibliographic Details
Main Authors DI COLA, Onorato, DA ROCHA ROLO, Manuel Dionisio, PANCHERI, Lucio, GIUBILATO, Piero, MARGUTTI, Giovanni, RIVETTI, Angelo
Format Patent
LanguageEnglish
French
German
Published 02.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.
Bibliography:Application Number: EP20180797153