METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
The present invention aims to obtain a 4H-SiC single crystal having good morphology while preventing heterogeneous polymorphs from being mixed in regardless of the presence or absence of doping in growing a 4H-SiC single crystal by the TSSG method.The present inventors have made earnest studies on t...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
07.07.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention aims to obtain a 4H-SiC single crystal having good morphology while preventing heterogeneous polymorphs from being mixed in regardless of the presence or absence of doping in growing a 4H-SiC single crystal by the TSSG method.The present inventors have made earnest studies on the effects of the off-angle on the grown crystal in a method for producing a SiC single crystal by a TSSG method, and have found as a result that, when the off-angle is set to 60 to 68°, heterogeneous polymorphs are less likely to be mixed in during the growth of 4H-SiC single crystal, and if, during that period, a meltback method is used to smooth the surface of the seed crystal and then grow the crystal, it is possible to obtain a grown crystal having good morphology. |
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Bibliography: | Application Number: EP20180871998 |