NEW ON-CHIP S PARAMETER CALIBRATION METHOD

The present application is applicable to the technical field of terahertz on-wafer measurement, and provides a new on-wafer S-parameter calibration method and device. The method includes: performing two-port calibration on a waveguide end face when a probe is not connected to a test system; performi...

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Bibliographic Details
Main Authors FU, Xingchang, TIAN, Xiuwei, WANG, Yibang, CAO, Jian, WU, Aihua, LIU, Chen, LI, Chong, LIU, Yanan, LIANG, Faguo
Format Patent
LanguageEnglish
French
German
Published 20.04.2022
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:The present application is applicable to the technical field of terahertz on-wafer measurement, and provides a new on-wafer S-parameter calibration method and device. The method includes: performing two-port calibration on a waveguide end face when a probe is not connected to a test system; performing one-port calibration on each of two probe end faces when the probe is connected to the test system; and fabricating a crosstalk calibration standard equal to a device under test in length on a substrate of the device under test, and correct a crosstalk error of the test system according to the crosstalk calibration standard. The present application can realize accurate characterization and correction of crosstalk error in a high-frequency on-wafer S-parameter calibration process, and improve the accuracy of error correction in high-frequency on-wafer S-parameter measurement.
Bibliography:Application Number: EP20180925049