GRAPHENE MICROCAVITY FREQUENCY COMBS AND RELATED METHODS OF MANUFACTURING

Based on graphene heterostructure in chip-scale silicon nitride microresonators, optoelectronic control and modulation in frequency combs via group velocity dispersion modulation can be demonstrated. By tuning graphene Fermi level from 0.50 eV to 0.65 eV via electric-field gating, deterministic in-c...

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Bibliographic Details
Main Authors HUANG, Shu-Wei, VINOD, Abhinav Kumar, WONG, Chee Wei, YAO, Baicheng
Format Patent
LanguageEnglish
French
German
Published 19.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
RESONATORS
RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
WAVEGUIDES
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Summary:Based on graphene heterostructure in chip-scale silicon nitride microresonators, optoelectronic control and modulation in frequency combs via group velocity dispersion modulation can be demonstrated. By tuning graphene Fermi level from 0.50 eV to 0.65 eV via electric-field gating, deterministic in-cavity group velocity dispersion control from anomalous (−62 fs2/mm) to normal (+9 fs2/mm) can be achieved with Q factor remaining high at 106. Consequently, both the primary comb lines and the full comb spectra can be controllable dynamically with the on/off switching of the Cherenkov radiation, the tuning of the primary comb lines from 2.3 THz to 7.2 THz, and the comb span control from zero comb lines to ˜781 phase-locked comb lines, directly via the DC voltage.
Bibliography:Application Number: EP20180851696