INJECT ASSEMBLY FOR EPITAXIAL DEPOSITION PROCESSES

• Main Authors: AOKI, Yuji, OKI, Shinichi, MORI, Yoshinobu
• Format: Patent
• Language: English; French; German
• Published: 01.07.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In one embodiment, a gas introduction insert includes a gas distribution assembly having a body, a plurality of gas injection channels formed within the gas distribution assembly, at least a portion of the plurality of gas injection channels being adjacent to a blind channel formed in the gas distribution assembly, and a rectification plate bounding one side of the plurality of gas injection channels and the blind channel, the rectification plate including a non-perforated portion corresponding to the position of the blind channel.