INDIUM PHOSPHIDE (INP) WAFER HAVING PITS OF OLIVE-SHAPE ON THE BACK SIDE, METHOD AND ETCHING SOLUTION FOR MANUFACTURING THE SAME

A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer co...

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Bibliographic Details
Main Authors LI, Haimiao, WANG, Liugang, CHU, Sung-Nee George
Format Patent
LanguageEnglish
French
German
Published 03.06.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.
Bibliography:Application Number: EP20180838833