DEVICE AND METHOD FOR A THIN FILM RESISTOR USING A VIA RETARDATION LAYER
A device and method for fabricating an integrated circuit (IC) chip is disclosed. The method includes depositing a first thin film resistor material on a first inter-level dielectric (ILD) layer; depositing an etch retardant layer overlying the first thin film resistor material; and patterning and e...
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Format | Patent |
Language | English French German |
Published |
20.05.2020
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Abstract | A device and method for fabricating an integrated circuit (IC) chip is disclosed. The method includes depositing a first thin film resistor material on a first inter-level dielectric (ILD) layer; depositing an etch retardant layer overlying the first thin film resistor material; and patterning and etching the etch retardant layer and the first thin film resistor material to form a first resistor. The method continues with depositing a second ILD layer overlying the first resistor; and patterning and etching the second ILD layer using a first etch chemistry to form vias through the second ILD layer and the etch retardant layer to the first resistor. The etch retardant layer is selective to a first etch chemistry and the thickness of the etch retardant layer is such that the via etching process removes substantially all exposed portions of the etch retardant layer and substantially prevents consumption of the underlying first thin film resistor material. |
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AbstractList | A device and method for fabricating an integrated circuit (IC) chip is disclosed. The method includes depositing a first thin film resistor material on a first inter-level dielectric (ILD) layer; depositing an etch retardant layer overlying the first thin film resistor material; and patterning and etching the etch retardant layer and the first thin film resistor material to form a first resistor. The method continues with depositing a second ILD layer overlying the first resistor; and patterning and etching the second ILD layer using a first etch chemistry to form vias through the second ILD layer and the etch retardant layer to the first resistor. The etch retardant layer is selective to a first etch chemistry and the thickness of the etch retardant layer is such that the via etching process removes substantially all exposed portions of the etch retardant layer and substantially prevents consumption of the underlying first thin film resistor material. |
Author | HONG, Qi-zhong KANDE, Dhishan ALI, Abbas |
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DocumentTitleAlternate | VORRICHTUNG UND VERFAHREN FÜR EINEN DÜNNSCHICHTWIDERSTAND MIT EINER DURCHKONTAKTIERUNGSVERZÖGERUNGSSCHICHT DISPOSITIF ET PROCÉDÉ POUR UNE RÉSISTANCE À FILM MINCE UTILISANT UNE COUCHE DE RETARDEMENT DE TROU D'INTERCONNEXION |
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RelatedCompanies | Texas Instruments Incorporated |
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Snippet | A device and method for fabricating an integrated circuit (IC) chip is disclosed. The method includes depositing a first thin film resistor material on a first... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY RESISTORS SEMICONDUCTOR DEVICES |
Title | DEVICE AND METHOD FOR A THIN FILM RESISTOR USING A VIA RETARDATION LAYER |
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