UV-LED AND DISPLAY

A UV-LED is disclosed. The UV-LED includes a patterned sapphire substrate 20, a u-GaN buffer layer 22 formed on the sapphire substrate 20, an n-GaN contact layer 24 formed on the u-GaN buffer layer 22, an InGaN light emitting layer 28 formed on the n-GaN contact layer 24, and a p-GaN layer 30 formed...

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Bibliographic Details
Main Author MURAMOTO, Yoshihiko
Format Patent
LanguageEnglish
French
German
Published 08.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A UV-LED is disclosed. The UV-LED includes a patterned sapphire substrate 20, a u-GaN buffer layer 22 formed on the sapphire substrate 20, an n-GaN contact layer 24 formed on the u-GaN buffer layer 22, an InGaN light emitting layer 28 formed on the n-GaN contact layer 24, and a p-GaN layer 30 formed on the InGaN light emitting layer 28. The UV-LED has a quadrate planar shape with at least one side having a chip size of 50 µm or less.
Bibliography:Application Number: EP20190185578