SILICA-CONTAINING SUBSTRATES WITH VIAS HAVING AN AXIALLY VARIABLE SIDEWALL TAPER AND METHODS FOR FORMING THE SAME

Silica-containing substrates including vias with a narrow waist, and related devices and methods are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol% silica, a first surface, a second surface opposite the first surface, and a...

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Bibliographic Details
Main Authors HUANG, Tian, JIN, Yuhui, DAHLBERG, Rachel Eileen, PIECH, Garrett Andrew, RICKETTS, Daniel Ohen
Format Patent
LanguageEnglish
French
German
Published 15.04.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Silica-containing substrates including vias with a narrow waist, and related devices and methods are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol% silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter less than or equal to 100 µm at the first surface, a second diameter less than or equal to 100 µm at the second surface, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.
Bibliography:Application Number: EP20180770110