METHOD FOR DETERMINING THE THERMAL DONOR CONCENTRATION OF A SEMICONDUCTOR SAMPLE

• Main Authors: MEHL, Torbjørn, KVALBEIN, Lisa, FAVRE, Wilfried, OLSEN, Espen, LETTY, Elénore, VEIRMAN, Jordi, BURUD, Ingunn
• Format: Patent
• Language: English; French; German
• Published: 02.11.2022
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The invention relates to a method for determining the thermal donor concentration ([TD]test) of a test sample made of a semiconductor material. The method comprises the following steps:- providing (S11) a reference sample made of the same semiconductor material and having a known thermal donor concentration ([TD]ref);- measuring (S12) with a photoluminescence tool a photoluminescence signal of the reference sample for at least one photon energy comprised between 0.65 eV and 0.8 eV, the photoluminescence signal of the reference sample exhibiting an intensity peak in a photon energy range of 0.65 eV to 0.8 eV;- determining (S13), from the photoluminescence signal of the reference sample, an experimental relationship between the thermal donor concentration and a parameter representative of the intensity peak;- measuring (S14) with the photoluminescence tool a photoluminescence signal of the test sample for at least one photon energy comprised between 0.65 eV and 0.8 eV;- determining (S15) from the photoluminescence signal of the test sample a specific value of said parameter; and- determining (S15) the thermal donor concentration ([TD]test) of the test sample from the specific value of said parameter by using said experimental relationship.