BEAM SHAPING FOR ULTRA-SMALL VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) ARRAYS

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region inclu...

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Bibliographic Details
Main Authors FISHER, Brent, KANJORSKI, Russell, CARTER, James, BURROUGHS, Scott
Format Patent
LanguageEnglish
French
German
Published 15.01.2020
Subjects
ANALOGOUS ARRANGEMENTS USING OTHER WAVES
BASIC ELECTRIC ELEMENTS
DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES
DEVICES USING STIMULATED EMISSION
ELECTRICITY
LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES
MEASURING
PHYSICS
RADIO DIRECTION-FINDING
RADIO NAVIGATION
TESTING
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Summary:A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
Bibliography:Application Number: EP20180784395