SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS

There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoele...

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Bibliographic Details
Main Authors TAKEYA, Yukari, IWABUCHI, Shin, KUDOH, Yoshiharu, UEDA, Yoichi, HIRANO, Tomoyuki, OHURA, Masashi, YOSHIDA, Shinichi, SUZUKI, Ryoji, ANSAI, Hisahiro, NOMURA, Hirotoshi, UCHIDA, Tetsuya, MORI, Hiroyuki
Format Patent
LanguageEnglish
French
German
Published 15.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.
Bibliography:Application Number: EP20180710548