Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga ALLOY SPUTTERING TARGET

• Main Authors: HASHIMOTO Shu, TAKEDA Takuma, UMEMOTO Keita, MORI Satoru
• Format: Patent
• Language: English; French; German
• Published: 26.02.2020
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; METALLURGY; PERFORMING OPERATIONS; POWDER METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WORKING METALLIC POWDER

A Cu-Ga alloy sputtering target having a composition including, as a metal component, Ga in a range of 20 at% or more and 45 at% or less, K and Na in a range of 0.1 at% or more and 2 at% or less in total, and a Cu balance including inevitable impurities, in which, complex fluorides containing Na, K, and F are dispersed in a matrix of a Cu-Ga alloy, a maximum diameter of an inscribed circle of the complex fluorides is 30 µm or less, and [Na]/([Na]+[K]) is set to be in a range of 0.3 or more and 0.9 or less, [Na] and [K] being atomic ratios of Na and K in the complex fluorides, respectively.