TANDEM PHOTOVOLTAIC DEVICE COMPRISING A SUB-CELL BASED ON PEROVSKITE AND A SUB-CELL BASED ON SILICON

The invention relates to a tandem photovoltaic device comprising: a sub-cell A based on perovskite, and a sub-cell B with a silicon heterojunction, the sub-cell A successively containing: a hole transport layer HTL which is a double layer consisting of a neutral layer HTL-N based on PEDOT:PSS and an...

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Bibliographic Details
Main Authors MANCEAU, Matthieu, MUNOZ, Maria-Delfina, BERSON, Solenn
Format Patent
LanguageEnglish
French
German
Published 23.10.2019
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Summary:The invention relates to a tandem photovoltaic device comprising: a sub-cell A based on perovskite, and a sub-cell B with a silicon heterojunction, the sub-cell A successively containing: a hole transport layer HTL which is a double layer consisting of a neutral layer HTL-N based on PEDOT:PSS and an acid layer HTL-A based on PEDOT:PSS, the PEDOT being poly(3,4-ethylenedioxythiophene) and the PSS being poly(4-styrenesulfonate), an active layer based on perovskite, and an electron transport layer ETLA, the HTL-A layer being in direct contact with the active layer based on perovskite.
Bibliography:Application Number: EP20170794380