PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

The invention relates to a process for preparing polycrystalline silicon, comprising introducing a reaction gas containing hydrogen and silane and/or halogen silane into a reactor, wherein the reactor comprises at least one heated carrier body, on which elementary silicon has been deposited by means...

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Bibliographic Details
Main Authors HERTLEIN, Harald, KRAUS, Heinz
Format Patent
LanguageEnglish
French
German
Published 23.10.2019
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:The invention relates to a process for preparing polycrystalline silicon, comprising introducing a reaction gas containing hydrogen and silane and/or halogen silane into a reactor, wherein the reactor comprises at least one heated carrier body, on which elementary silicon has been deposited by means of pyrolysis, forming the polycrystalline silicon. In a continuous process, waste gas is led out of the reactor and hydrogen recovered from said waste gas is fed to the reactor again as circulating gas. The circulating gas has a nitrogen content of less than 1000 ppmv. The invention further relates to polycrystalline silicon having a nitrogen component of less than 2 ppba.
Bibliography:Application Number: EP20160823182