USE OF AN ETCHING SOLUTION FOR TUNGSTEN WORD LINE RECESS
Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching com...
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| Main Authors | , , |
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| Format | Patent |
| Language | English French German |
| Published |
22.05.2024
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors and one or more surfactants. |
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| AbstractList | Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors and one or more surfactants. |
| Author | GE, Jhih Kuei LEE, Yi-Chia LIU, Wen Dar |
| Author_xml | – fullname: LEE, Yi-Chia – fullname: LIU, Wen Dar – fullname: GE, Jhih Kuei |
| BookMark | eNrjYmDJy89L5WSwCA12VfB3U3D0U3ANcfbw9HNXCPb3CQ3x9PdTcPMPUggJ9XMPDnH1Uwj3D3JR8PH0c1UIcnV2DQ7mYWBNS8wpTuWF0twMCm4gE3RTC_LjU4sLEpNT81JL4l0DjE1NDMzNTJwMjYlQAgAGeim5 |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| DocumentTitleAlternate | UTILISATION D'UNE SOLUTION DE GRAVURE POUR UN ÉVIDEMENT DE LIGNE DE MOTS DE TUNGSTÈNE VERWENDUNG EINER ÄTZLÖSUNG FÜR WOLFRAM-WORTLEITUNGSAUSSPARUNG |
| ExternalDocumentID | EP3540764B1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_EP3540764B13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 12:49:00 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English French German |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_EP3540764B13 |
| Notes | Application Number: EP20190163162 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240522&DB=EPODOC&CC=EP&NR=3540764B1 |
| ParticipantIDs | epo_espacenet_EP3540764B1 |
| PublicationCentury | 2000 |
| PublicationDate | 20240522 |
| PublicationDateYYYYMMDD | 2024-05-22 |
| PublicationDate_xml | – month: 05 year: 2024 text: 20240522 day: 22 |
| PublicationDecade | 2020 |
| PublicationYear | 2024 |
| RelatedCompanies | Versum Materials US, LLC |
| RelatedCompanies_xml | – name: Versum Materials US, LLC |
| Score | 3.5363371 |
| Snippet | Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | USE OF AN ETCHING SOLUTION FOR TUNGSTEN WORD LINE RECESS |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240522&DB=EPODOC&locale=&CC=EP&NR=3540764B1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LToNAcNJUo960amx9ZA-GG5E3eCBGYPGRFkgB7a2Bspv0QhuL8fedJbR60dtmNzOZnWTeO7MAt5wxi1fckc2SF7KxMA250ComM1WvEKRSSlv0O08i6zk3XmfmrAfLbS9MOyf0qx2OiBK1QHlvWn29_kliBe3bys1ducSt1UOYuYHURcdontCfkALPpUkcxL7k-7iSoqkr0hu2ZXgYKO2hF20LYaBvnmhKWf-2KOEx7CeIrG5OoMfqARz624_XBnAw6erduOxEb3MKTp5SEofkMSI080WSiaTxOBcZJoKRHMny6CnNaETeMawj45eIkin1kb1nQEIBISMJ89115zTZEaufQ79e1ewCSME0tXB4oZT83kCrU6g6M2zFQfUkhrjzIQz_RDP65-wSjgTfREFc066g33x8smu0s01503LoG635fi4 |
| link.rule.ids | 230,309,783,888,25576,76882 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dT8Iw8ELQiG-KGsGvPpi9LbKxwXxYjNs6UaEjbFPeSMfahJdBZMa_73UB9EXfLm3ucr3kel-9K8CtFKInc-nodia5bs1tS-dmLnRhdHNEyTtZX_U7j1hvkFovU3tag8W2F6aaE_pVDUdEjZqjvpfVfb36SWIF1dvK9V22wKXlQ5i4gbaJjtE8oT-hBZ5Lx1EQ-ZrvI6SxiavSG_2e5WGgtIcetqM-O6BvnmpKWf22KOER7I-RWFEeQ00UTWj424_XmnAw2tS7Edyo3voEnDSmJArJIyM08VWSicTRMFUZJoKRHElS9hQnlJF3DOvI8JlRMqE-ivcUSKgwdGRhtjvujI53zHbPoF4sC3EOhAvT4I7knUzeW2h1uNEVVr_j4PWkhrjLFrT-JNP-Z-8GGoNkNJwhX68XcKhkqIrjpnkJ9fLjU1yhzS2z60pa38CRgR4 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=USE+OF+AN+ETCHING+SOLUTION+FOR+TUNGSTEN+WORD+LINE+RECESS&rft.inventor=LEE%2C+Yi-Chia&rft.inventor=LIU%2C+Wen+Dar&rft.inventor=GE%2C+Jhih+Kuei&rft.date=2024-05-22&rft.externalDBID=B1&rft.externalDocID=EP3540764B1 |