CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH IMPROVED DISHING AND PATTERN SELECTIVITY

wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing comp...

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Bibliographic Details
Main Authors PALLIKKARA KUTTIATOOR, Sudeep, HAMILTON, Charles, DOCKERY, Kevin, P
Format Patent
LanguageEnglish
French
German
Published 10.07.2024
Subjects
ADHESIVES
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
TRANSPORTING
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Summary:wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
Bibliography:Application Number: EP20170861659