TRANSPARENT P-N JUNCTION PROVIDING A RECTIFYING CONTACT

• Main Authors: LETURCQ, Renaud, LENOBLE, Damien, CREPELLIERE, Jonathan, BAHLAWANE, Naoufal
• Format: Patent
• Language: English; French; German
• Published: 07.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The first object of the invention is directed to a three-layer architecture p-n junction comprising a substrate as first layer, a second layer of p-oxide material coated on said substrate, and a third layer of n-oxide material coated on said second layer; wherein said third layer of n-oxide material comprises ZnO. Said p-n junction is remarkable in that said second layer of p-oxide material consists of CuCrO2 wherein the Cr/Cu ratio within said layer is >1. The second object of the invention is a method for forming the p-n junction as defined in the first object using the steps of coating the substrate with CuCrO2 by MOCVD and of coating said layer with ZnO by ALD. The third object of the invention concerns the use of said p-n junction as a diode in a photodiode array of the detection unit of a UV detector.