CMOS IMAGE SENSOR
Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units that are arranged in lattice manner and that are obtained by rotating a rectangular area including four sets of photodiodes and transfer gates...
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| Main Author | |
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| Format | Patent |
| Language | English French German |
| Published |
22.09.2021
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units that are arranged in lattice manner and that are obtained by rotating a rectangular area including four sets of photodiodes and transfer gates (TX) and one charge accumulation portion by 45 degrees. The example CMOS image sensor further includes a second plurality of pixel units that are arranged by shifted in a horizon direction by half of the distance between the centers of the adjacent pixel units in the horizon direction and shifted in a vertical direction by half of the distance between the centers of the adjacent pixel units in the vertical direction from the positions of the respective pixel units of the first plurality of pixel units. |
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| AbstractList | Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units that are arranged in lattice manner and that are obtained by rotating a rectangular area including four sets of photodiodes and transfer gates (TX) and one charge accumulation portion by 45 degrees. The example CMOS image sensor further includes a second plurality of pixel units that are arranged by shifted in a horizon direction by half of the distance between the centers of the adjacent pixel units in the horizon direction and shifted in a vertical direction by half of the distance between the centers of the adjacent pixel units in the vertical direction from the positions of the respective pixel units of the first plurality of pixel units. |
| Author | MONOI, Makoto |
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| DocumentTitleAlternate | CAPTEUR D'IMAGE CMOS CMOS-BILDSENSOR |
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| Notes | Application Number: EP20160918858 |
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| RelatedCompanies | Huawei Technologies Co., Ltd |
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| Snippet | Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
| Title | CMOS IMAGE SENSOR |
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