CMOS IMAGE SENSOR

Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units that are arranged in lattice manner and that are obtained by rotating a rectangular area including four sets of photodiodes and transfer gates...

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Bibliographic Details
Main Author MONOI, Makoto
Format Patent
LanguageEnglish
French
German
Published 22.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units that are arranged in lattice manner and that are obtained by rotating a rectangular area including four sets of photodiodes and transfer gates (TX) and one charge accumulation portion by 45 degrees. The example CMOS image sensor further includes a second plurality of pixel units that are arranged by shifted in a horizon direction by half of the distance between the centers of the adjacent pixel units in the horizon direction and shifted in a vertical direction by half of the distance between the centers of the adjacent pixel units in the vertical direction from the positions of the respective pixel units of the first plurality of pixel units.
Bibliography:Application Number: EP20160918858