PROTECTING A SUBSTRATE REGION DURING FABRICATION OF A FET SENSOR

A method for forming an intermediate (100) in the fabrication of a field-effect transistor sensor, the method comprising:a. providing a substrate having a substrate region (210) comprising a gate dielectric (211) thereon and optionally a nanocavity therein (212),b. providing a sacrificial element (3...

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Bibliographic Details
Main Authors MARTENS, Koen, SEVERI, Simone, COLLAERT, Nadine, KUNNEN, Eddy
Format Patent
LanguageEnglish
French
German
Published 14.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method for forming an intermediate (100) in the fabrication of a field-effect transistor sensor, the method comprising:a. providing a substrate having a substrate region (210) comprising a gate dielectric (211) thereon and optionally a nanocavity therein (212),b. providing a sacrificial element (310) over the substrate region (210),c. providing one or more layers (400) having a combined thickness of at least 100 nm over the sacrificial element (310),d. opening an access (500) to the sacrificial element (310) through the one or more layers (400), ande. optionally selectively removing the sacrificial element (310), thereby opening a sensor cavity (300) over the substrate region (210);wherein the sacrificial element (310) is removable by oxidation and wherein, if step e is performed, selectively removing the sacrificial element (310) comprises an oxidative removal.
Bibliography:Application Number: EP20170209212