UTILIZATION OF BACKSIDE SILICIDATION TO FORM DUAL SIDE CONTACTED CAPACITOR

• Main Authors: KOLEV, Plamen Vassilev, GOKTEPELI, Sinan, FANELLI, Steve, HAMMOND, Richard, GU, Shiqun, STUBER, Michael Andrew
• Format: Patent
• Language: English; French; German
• Published: 26.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A fro...