UTILIZATION OF BACKSIDE SILICIDATION TO FORM DUAL SIDE CONTACTED CAPACITOR
An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A fro...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English French German |
Published |
26.06.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization. |
---|---|
Bibliography: | Application Number: EP20170745583 |