EQUALIZING ERASE DEPTH IN DIFFERENT BLOCKS OF MEMORY CELLS

• Main Authors: DONG, Yingda, ZENG, Caifu, PANG, Liang, YU, Xuehong, ZHANG, Zhengyi
• Format: Patent
• Language: English; French; German
• Published: 12.06.2019
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A memory device and associated techniques provide a uniform erase depth for different blocks of memory cells which are at different distances from pass gates of a voltage source. In one approach, a voltage of a source side select gate transistor of a memory string is a decreasing function of the dis...