GATE STACK FOR HETEROSTRUCTURE DEVICE

• Main Author: Ramdani, Jamal
• Format: Patent
• Language: English; French; German
• Published: 08.05.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A heterostructure semiconductor device includes a first active layer (102) and a second active layer (106) disposed on the first active layer. A two-dimensional electron gas layer (104) is formed between the first and second active layers. A sandwich gate dielectric layer structure (113) is disposed...