METHOD FOR FORMING SOURCE/DRAIN CONTACTS
In a first aspect, the present invention relates to a method for forming a source contact and a drain contact (700) in a semiconductor structure, comprising: - masking a source region (221s) and a drain region (221d), - replacing an unmasked sacrificial material (440) with a dielectric layer (450),...
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| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English French German |
| Published |
08.05.2019
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| Subjects | |
| Online Access | Get full text |
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| Abstract | In a first aspect, the present invention relates to a method for forming a source contact and a drain contact (700) in a semiconductor structure, comprising:
- masking a source region (221s) and a drain region (221d),
- replacing an unmasked sacrificial material (440) with a dielectric layer (450),
- removing the masking structure (550; 520m, 510m),
- selectively removing, by a wet etching, the sacrificial material (440) above the source and/or drain region (221) with respect to the dielectric layer (450), to such an extent as to expose the top surface of the source and/or drain region (221), and
- depositing a conductive material (720) on the source and/or drain region (221), thereby forming the source contact and/or drain contact (700) in the semiconductor structure. |
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| AbstractList | In a first aspect, the present invention relates to a method for forming a source contact and a drain contact (700) in a semiconductor structure, comprising:
- masking a source region (221s) and a drain region (221d),
- replacing an unmasked sacrificial material (440) with a dielectric layer (450),
- removing the masking structure (550; 520m, 510m),
- selectively removing, by a wet etching, the sacrificial material (440) above the source and/or drain region (221) with respect to the dielectric layer (450), to such an extent as to expose the top surface of the source and/or drain region (221), and
- depositing a conductive material (720) on the source and/or drain region (221), thereby forming the source contact and/or drain contact (700) in the semiconductor structure. |
| Author | CHEW, Soon Aik DEMUYNCK, Steven |
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| Discipline | Medicine Chemistry Sciences |
| DocumentTitleAlternate | PROCÉDÉ PERMETTANT DE FORMER DES CONTACTS DE SOURCE/DRAIN VERFAHREN ZUR HERSTELLUNG VON SOURCE-/DRAIN-KONTAKTEN |
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| Notes | Application Number: EP20170199711 |
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| PublicationDateYYYYMMDD | 2019-05-08 |
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| PublicationYear | 2019 |
| RelatedCompanies | IMEC vzw |
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| Snippet | In a first aspect, the present invention relates to a method for forming a source contact and a drain contact (700) in a semiconductor structure, comprising:
-... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | METHOD FOR FORMING SOURCE/DRAIN CONTACTS |
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