METHOD FOR FORMING SOURCE/DRAIN CONTACTS

In a first aspect, the present invention relates to a method for forming a source contact and a drain contact (700) in a semiconductor structure, comprising: - masking a source region (221s) and a drain region (221d), - replacing an unmasked sacrificial material (440) with a dielectric layer (450),...

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Bibliographic Details
Main Authors DEMUYNCK, Steven, CHEW, Soon Aik
Format Patent
LanguageEnglish
French
German
Published 08.05.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a first aspect, the present invention relates to a method for forming a source contact and a drain contact (700) in a semiconductor structure, comprising: - masking a source region (221s) and a drain region (221d), - replacing an unmasked sacrificial material (440) with a dielectric layer (450), - removing the masking structure (550; 520m, 510m), - selectively removing, by a wet etching, the sacrificial material (440) above the source and/or drain region (221) with respect to the dielectric layer (450), to such an extent as to expose the top surface of the source and/or drain region (221), and - depositing a conductive material (720) on the source and/or drain region (221), thereby forming the source contact and/or drain contact (700) in the semiconductor structure.
Bibliography:Application Number: EP20170199711