QUANTUM DOT LIGHT EMITTING DEVICES

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compou...

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Main Authors SOKOLOV, Anatoliy N, GRIGG, Robert David, KRAMER, John W, TREFONAS, III, Peter, DEVORE, David D, MUKHOPADHYAY, Sukrit, GOODFELLOW, Brian, SPENCER, Liam P
Format Patent
LanguageEnglish
French
German
Published 21.12.2022
Subjects
ELECTRICITY
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Summary:The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.
Bibliography:Application Number: EP20170734967