ELECTRONIC CIRCUIT FOR CONTROL OR COUPLING OF SINGLE CHARGES OR SPINS AND METHODS THEREFOR

A quantum dot structure having a split-gate geometry is provided. The quantum dot is configured for incorporation into a quantum dot array of a quantum processing unit. A gap between a reservoir accumulation gate and a quantum dot accumulation gate provides a tunnel barrier between an electric charg...

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Bibliographic Details
Main Authors PIORO-LADRIERE, Michel, KING GAMBLE, John, ROCHETTE, Sophie, TEN EYCK, Gregory A, RUDOLPH, Martin, CARROLL, Malcolm
Format Patent
LanguageEnglish
French
German
Published 07.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A quantum dot structure having a split-gate geometry is provided. The quantum dot is configured for incorporation into a quantum dot array of a quantum processing unit. A gap between a reservoir accumulation gate and a quantum dot accumulation gate provides a tunnel barrier between an electric charge reservoir and a quantum dot well. An electrical potential applied to the gates defines a tunnel barrier height, width and charge tunneling rate between the well and the reservoir without relying on any barrier gate to control the charge tunneling rate.
Bibliography:Application Number: EP20170809503