ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE

An electrostatic discharge, ESD, protection structure (200) formed within a semiconductor substrate of an integrated circuit device (600). The integrated circuit device (600) comprising: a radio frequency domain (632); a digital domain (610). The ESD protection structure (200) further includes an in...

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Bibliographic Details
Main Authors KLIMCZAK, Janusz, SECAREANU, Radu, ABESSOLO BIDZO, Dolphin, CLAWIN, Detlef
Format Patent
LanguageEnglish
French
German
Published 13.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
SEMICONDUCTOR DEVICES
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Summary:An electrostatic discharge, ESD, protection structure (200) formed within a semiconductor substrate of an integrated circuit device (600). The integrated circuit device (600) comprising: a radio frequency domain (632); a digital domain (610). The ESD protection structure (200) further includes an intermediate domain located between the radio frequency domain (632) and the digital domain (610) that comprises at least one radio frequency, RF, passive or active device that exhibits an impedance characteristic that increases as a frequency of operation increases.
Bibliography:Application Number: EP20180188251