INTEGRATED RADIO FREQUENCY CIRCUIT STRUCTURE
An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include a back-bias metallization on a second surface opposite the first surface of the isolation layer. A body of the active devic...
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Main Author | |
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Format | Patent |
Language | English French German |
Published |
04.03.2020
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Subjects | |
Online Access | Get full text |
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Summary: | An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include a back-bias metallization on a second surface opposite the first surface of the isolation layer. A body of the active device is biased by the back-bias metallization. The integrated RF circuit structure may further include a handle substrate on a front-side dielectric layer on the active device. |
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Bibliography: | Application Number: EP20170729961 |