INTEGRATED RADIO FREQUENCY CIRCUIT STRUCTURE

An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include a back-bias metallization on a second surface opposite the first surface of the isolation layer. A body of the active devic...

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Bibliographic Details
Main Author GOKTEPELI, Sinan
Format Patent
LanguageEnglish
French
German
Published 04.03.2020
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Summary:An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include a back-bias metallization on a second surface opposite the first surface of the isolation layer. A body of the active device is biased by the back-bias metallization. The integrated RF circuit structure may further include a handle substrate on a front-side dielectric layer on the active device.
Bibliography:Application Number: EP20170729961