SEMICONDUCTOR DEVICE

This semiconductor device comprises: an n-type semiconductor substrate which is connected to an output terminal; a first p-type well which is formed in the n-type semiconductor substrate; a first n-type semiconductor region which is formed in the first p-type well and is connected to a control termi...

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Bibliographic Details
Main Authors YUKI, Hirofumi, FURUTANI, Hiroshi, TAKAHASHI, Shuntaro
Format Patent
LanguageEnglish
French
German
Published 03.10.2018
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:This semiconductor device comprises: an n-type semiconductor substrate which is connected to an output terminal; a first p-type well which is formed in the n-type semiconductor substrate; a first n-type semiconductor region which is formed in the first p-type well and is connected to a control terminal; and a potential separation part which is connected between the first p-type well and a ground terminal. The potential separation part sets the first p-type well and the ground terminal to a same potential when the output terminal is held at a higher potential than the ground terminal, and sets the first p-type well and the output terminal to a same potential when the output terminal is held at a lower potential than the ground terminal.
Bibliography:Application Number: EP20160881533