SPUTTERING TARGET AND METHOD FOR PRODUCING SPUTTERING TARGET

• Main Authors: ZHANG Shoubin, UMEMOTO Keita, MUTSUDA Yuya
• Format: Patent
• Language: English; French; German
• Published: 05.09.2018
• Subjects: ALLOYS; CASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; METALLURGY; PERFORMING OPERATIONS; POWDER METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WORKING METALLIC POWDER

The present invention provides a sputtering target having a composition containing 45 at% to 90 at% of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu 11 In 9 compound phase exist, and an XRD peak ratio I(In)/I(Cu 11 In 9 ) between the In single phase and the Cu 11 In 9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu 11 In 9 compound phase is 150 µm or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.