SEMICONDUCTOR DEVICE

• Main Authors: Parteder, Georg, Singulani, Anderson, Coppeta, Raffaele, Schrank, Franz, Kraft, Jochen
• Format: Patent
• Language: English; French; German
• Published: 22.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device (10) comprises a semiconductor body (11) and an electrically conductive via (12) which extends through at least a part of the semiconductor body (11), where the via (12) has a lateral size which is given in a first lateral direction (x) that is perpendicular to a vertical direction (z) given by the main axis of extension of the via (12) and where the via (12) has a top side (13) and a bottom side (14) that faces away from the top side (13). The semiconductor device (10) further comprises an electrically conductive etch-stop layer (15) arranged at the bottom side (14) of the via (12) in a plane which is parallel to the first lateral direction (x), and at least one electrically conductive contact layer (16) at the bottom side (14) of the via (12) in a plane which is parallel to the first lateral direction (x). The lateral extent in the first lateral direction (x) of the etch-stop layer (15) is larger than the lateral size of the via (12) and the lateral extent in the first lateral direction (x) of the contact layer (16) is smaller than the lateral size of the via (12). Furthermore, the etch-stop layer (15) is arranged between the electrically conductive via (12) and the contact layer (16) in the vertical direction (z).