SHORT CHANNEL TRENCH POWER MOSFET

• Main Authors: KNOLL, Lars, MINAMISAWA, Renato
• Format: Patent
• Language: English; French; German
• Published: 17.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In the above inequation Lch is a channel length, εCR is a permittivity of the channel region, εGI is a permittivity of the gate insulation layer, tCOMP is a thickness of the compensation layer and tGI is a thickness of the gate insulation layer.