SHORT CHANNEL TRENCH POWER MOSFET
In the above inequation Lch is a channel length, εCR is a permittivity of the channel region, εGI is a permittivity of the gate insulation layer, tCOMP is a thickness of the compensation layer and tGI is a thickness of the gate insulation layer.
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
17.07.2019
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Subjects | |
Online Access | Get full text |
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Summary: | In the above inequation Lch is a channel length, εCR is a permittivity of the channel region, εGI is a permittivity of the gate insulation layer, tCOMP is a thickness of the compensation layer and tGI is a thickness of the gate insulation layer. |
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Bibliography: | Application Number: EP20170714812 |