SEMICONDUCTOR DEVICE AND OVERCURRENT PROTECTION DEVICE

An object of the present invention is to suppress an increase in on-resistance of an entire circuit including a bidirectional semiconductor switch. A semiconductor device includes a first main MOS transistor and a second main MOS transistor of a vertical structure that are inversely coupled to each...

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Bibliographic Details
Main Authors TANAKA, Yoshiaki, NAKAJIMA, Kouji
Format Patent
LanguageEnglish
French
German
Published 09.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:An object of the present invention is to suppress an increase in on-resistance of an entire circuit including a bidirectional semiconductor switch. A semiconductor device includes a first main MOS transistor and a second main MOS transistor of a vertical structure that are inversely coupled to each other in series by sharing a drain electrode and a first sense MOS transistor and a second sense MOS transistor of a vertical structure that are inversely coupled to each other in series by sharing a drain electrode. The first sense MOS transistor is used for detecting the main current of the first main MOS transistor, and the second sense MOS transistor is used for detecting the main current of the second main MOS transistor.
Bibliography:Application Number: EP20170208002