PROCESS DOSE AND PROCESS BIAS DETERMINATION FOR BEAM LITHOGRAPHY

• Main Authors: Ünal, Nezih, Hofmann, Ulrich
• Format: Patent
• Language: English; French; German
• Published: 27.06.2018
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

A technique for determining a process dose for a beam lithography process is described. A method implementation of the technique comprises accessing a data set that enables to associate (i) a plurality of measured dimensions of features exposed by beam lithography with (ii) a plurality of different exposure doses, wherein the features were exposed with the different exposure doses, and with (iii) at least one of a plurality of different densities of the exposed features and a plurality of different nominal dimensions of the exposed features. The method also comprises providing a model that is parameterized in at least the following parameters (i) measured feature dimension; (ii) exposure dose; (iii) at least one of feature density and nominal feature dimension; (iv) process dose; and (v) at least one process bias. In a further step, the method comprises fitting the model with the data set to determine the process dose and the process bias.