PROCESS DOSE AND PROCESS BIAS DETERMINATION FOR BEAM LITHOGRAPHY

A technique for determining a process dose for a beam lithography process is described. A method implementation of the technique comprises accessing a data set that enables to associate (i) a plurality of measured dimensions of features exposed by beam lithography with (ii) a plurality of different...

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Bibliographic Details
Main Authors Ünal, Nezih, Hofmann, Ulrich
Format Patent
LanguageEnglish
French
German
Published 27.06.2018
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A technique for determining a process dose for a beam lithography process is described. A method implementation of the technique comprises accessing a data set that enables to associate (i) a plurality of measured dimensions of features exposed by beam lithography with (ii) a plurality of different exposure doses, wherein the features were exposed with the different exposure doses, and with (iii) at least one of a plurality of different densities of the exposed features and a plurality of different nominal dimensions of the exposed features. The method also comprises providing a model that is parameterized in at least the following parameters (i) measured feature dimension; (ii) exposure dose; (iii) at least one of feature density and nominal feature dimension; (iv) process dose; and (v) at least one process bias. In a further step, the method comprises fitting the model with the data set to determine the process dose and the process bias.
Bibliography:Application Number: EP20160002708