IMPLANTATION OF IONS GENERATED BY LASER ABLATION
A process for fabricating a substrate comprising a laser-induced plasma assisted modified layer, and a substrate comprising an ion-implanted layer. The process comprises ablating ions from a first target and a separate second target with incident radiation from a laser in the presence of a substrate...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
20.06.2018
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Subjects | |
Online Access | Get full text |
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Summary: | A process for fabricating a substrate comprising a laser-induced plasma assisted modified layer, and a substrate comprising an ion-implanted layer. The process comprises ablating ions from a first target and a separate second target with incident radiation from a laser in the presence of a substrate whereby a quantity of ablated ions from the first target and the second target are separately implanted into the substrate. Ablated ions from the second target are implanted into the substrate amongst implanted ions from the first target. Ablated ions of the first target (e,g Erbium) are a different material compared to ablated ions of the second target (e.g. Ytterbium). The resulting ion-implanted layer may have a substantially uniform distribution of the implanted ions from both the first and second targets collectively, and may be at a significantly greater depth than previously possible, desirably to a well-defined and sharp boundary within the substrate. |
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Bibliography: | Application Number: EP20160753439 |