THIN-FILM TRANSISTOR ARRAY FORMATION SUBSTRATE, IMAGE DISPLAY DEVICE SUBSTRATE, AND THIN-FILM TRANSISTOR ARRAY FORMATION SUBSTRATE MANUFACTURING METHOD

• Main Authors: CHUJO, Hina, ISHIZAKI, Mamoru
• Format: Patent
• Language: English; French; German
• Published: 14.02.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are a thin film transistor array formed substrate capable of favorably patterning a semiconductor layer and a protection layer, method thereof and an image display device substrate using the thin film transistor array formed substrate. The thin film transistor array formed substrate includes: a gate electrode; a gate insulation layer; a source electrode; a drain electrode; a pixel electrode connected to the drain electrode; a semiconductor layer; and a protection layer, which are laminated in this order, in which the source wiring serving as both the source wiring and the source electrode has notch portions periodically formed in a direction where the source wiring extends; the notch portions of the source wiring are formed at portions overlapping the gate electrode; portions where the notch portions exist correspond to a source wiring having a small width, and portions where no notch portions correspond to a source wiring having a large width which is wider than the source wiring having the small width; the source wiring having the large width at least includes an opening; the semiconductor layer is formed in a stripe shape having a longitudinal side extending in a direction where the source wiring extends, and formed across the source electrode and the drain electrode; and the protection layer is formed to cover entire portion of the semiconductor layer.