QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the na...

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Bibliographic Details
Main Authors ZHAO, Weiwen, PUETZ, Norbert, BERTRAM, Matthew, THEOBALD, Brian, KURTIN, Juanita N
Format Patent
LanguageEnglish
French
German
Published 05.05.2021
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Summary:Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.
Bibliography:Application Number: EP20160762453