QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS
Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the na...
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Main Authors | , , , , |
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Format | Patent |
Language | English French German |
Published |
05.05.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process. |
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Bibliography: | Application Number: EP20160762453 |