POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION, ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND METHOD FOR PRODUCING ACTIVE MATRIX SUBSTRATE

• Main Authors: SHINOZUKA, Akihiro, TANIGUCHI, Katsuto, NODERA, Nobutake, FUKE, Takashi, KOIWA, Shinji, KATO, Masahiro, MATSUMOTO, Takao, YOKOYAMA, Daishi
• Format: Patent
• Language: English; French; German
• Published: 13.12.2017
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTROGRAPHY; FREQUENCY-CHANGING; HOLOGRAPHY; MATERIALS THEREFOR; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate 30 includes a plurality of gate wirings 11 provided so as to extend parallel to each other on an insulating substrate 10, and a plurality of source wirings 12 provided so as to extend parallel to each other in a direction intersecting the respective gate wirings 11. An interlayer insulating film 14 and a gate insulating film 15 are interposed at portions including the intersecting portions of the gate wirings 11 and the source wirings 12, on a lower side of the source wiring 12. The interlayer insulating film 14 is formed using the positive type photosensitive siloxane composition without using a resist.