STATIC RANDOM ACCESS MEMORY (SRAM) BIT CELLS WITH WORDLINES ON SEPARATE METAL LAYERS FOR INCREASED PERFORMANCE, AND RELATED METHODS

• Main Authors: MOJUMDER, Niladri, Narayan, YEAP, Choh, Fei, RIM, Kern, SONG, Stanley, Seungchul, WANG, Zhongze
• Format: Patent
• Language: English; French; German
• Published: 21.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance are disclosed. In one aspect, an SRAM bit cell is disclosed employing a write wordline in a second metal layer, a first read wordline in a third metal layer, and a second read wordline in a fourth metal layer. Employing wordlines in separate metal layers allows wordlines to have increased widths, which decrease wordline resistance, decrease access time, and increase performance of the SRAM bit cell. To employ wordlines in separate metal layers, multiple tracks in a first metal layer are employed. To couple read wordlines to the tracks to communicate with SRAM bit cell transistors, landing pads are disposed on corresponding tracks disposed in the first metal layer. Landing pads corresponding to the write wordline are placed on corresponding tracks disposed in the first metal layer.