METHOD AND SYSTEM FOR PREDICTING HIGH-TEMPERATURE OPERATING LIFE OF SRAM DEVICES
A method for predicting high-temperature operating life of an integrated circuit (IC) includes performing bias temperature instability tests and high-temperature operating life tests on a device of the IC, establishing a relationship between the device bias temperature instability and the IC's...
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Language | English French German |
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04.10.2017
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Abstract | A method for predicting high-temperature operating life of an integrated circuit (IC) includes performing bias temperature instability tests and high-temperature operating life tests on a device of the IC, establishing a relationship between the device bias temperature instability and the IC's high-temperature operating life based on a result of the bias temperature instability tests and the high-temperature operating life tests. The method further includes providing a lot of subsequent integrated circuits (ICs), performing wafer-level bias temperature instability tests on a device of the ICs, and predicting high-temperature operating life of the ICs based on a result of the wafer-level bias temperature instability tests and based on the established relationship between the device's bias temperature instability and the IC's high-temperature operating life. The method can save significant effort and time over conventional approaches for accurate prediction of high-temperature operating life of an IC. |
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AbstractList | A method for predicting high-temperature operating life of an integrated circuit (IC) includes performing bias temperature instability tests and high-temperature operating life tests on a device of the IC, establishing a relationship between the device bias temperature instability and the IC's high-temperature operating life based on a result of the bias temperature instability tests and the high-temperature operating life tests. The method further includes providing a lot of subsequent integrated circuits (ICs), performing wafer-level bias temperature instability tests on a device of the ICs, and predicting high-temperature operating life of the ICs based on a result of the wafer-level bias temperature instability tests and based on the established relationship between the device's bias temperature instability and the IC's high-temperature operating life. The method can save significant effort and time over conventional approaches for accurate prediction of high-temperature operating life of an IC. |
Author | ZHAO, Yong ZHU, Yue Qin SONG, Yongliang CHIEN, Wei Ting |
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DocumentTitleAlternate | PROCÉDÉ ET SYSTÈME DE PRÉDICTION DE LA DURÉE DE VIE À HAUTE TEMPÉRATURE DE DISPOSITIFS SRAM VERFAHREN UND SYSTEM ZUR VORHERSAGE DER HOCHTEMPERATURBETRIEBSDAUER VON SRAM-VORRICHTUNGEN |
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RelatedCompanies | Semiconductor Manufacturing International Corporation (Shanghai) Semiconductor Manufacturing International Corporation (Beijing) |
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Snippet | A method for predicting high-temperature operating life of an integrated circuit (IC) includes performing bias temperature instability tests and... |
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Title | METHOD AND SYSTEM FOR PREDICTING HIGH-TEMPERATURE OPERATING LIFE OF SRAM DEVICES |
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