METHOD AND SYSTEM FOR PREDICTING HIGH-TEMPERATURE OPERATING LIFE OF SRAM DEVICES

• Main Authors: ZHAO, Yong, ZHU, Yue Qin, SONG, Yongliang, CHIEN, Wei Ting
• Format: Patent
• Language: English; French; German
• Published: 04.10.2017
• Subjects: INFORMATION STORAGE; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; STATIC STORES; TESTING

A method for predicting high-temperature operating life of an integrated circuit (IC) includes performing bias temperature instability tests and high-temperature operating life tests on a device of the IC, establishing a relationship between the device bias temperature instability and the IC's high-temperature operating life based on a result of the bias temperature instability tests and the high-temperature operating life tests. The method further includes providing a lot of subsequent integrated circuits (ICs), performing wafer-level bias temperature instability tests on a device of the ICs, and predicting high-temperature operating life of the ICs based on a result of the wafer-level bias temperature instability tests and based on the established relationship between the device's bias temperature instability and the IC's high-temperature operating life. The method can save significant effort and time over conventional approaches for accurate prediction of high-temperature operating life of an IC.