SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE

A semiconductor device and a method of making the same. The device includes a substrate having an AlGaN layer (46) located on one or more GaN layers (42), for forming a two dimensional electron gas (50) at an interface between the AlGaN layer and the GaN layer. The device also includes a source cont...

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Bibliographic Details
Main Authors Sonsky, Jan, Croon, Jeroen Antoon, Hurkx, Godefridus Adrianus Maria, Donkers, Johannes Josephus Theordorus Marinus
Format Patent
LanguageEnglish
French
German
Published 12.07.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and a method of making the same. The device includes a substrate having an AlGaN layer (46) located on one or more GaN layers (42), for forming a two dimensional electron gas (50) at an interface between the AlGaN layer and the GaN layer. The device also includes a source contact (32). The device further includes a drain contact (34). The device also includes a gate contact (36) located between the source contact and the drain contact. The gate contact includes a gate electrode. The gate contact also includes an electrically insulating layer (44) located between the gate electrode and the AlGaN layer. The insulating layer includes at least one aperture (60) for allowing holes generated during an off-state of the device to exit the device through the gate electrode.
Bibliography:Application Number: EP20160150164